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| TrenchStop 2 (R) nd IKW15N120T2 generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop(R) technology with soft, fast recovery anti-parallel EmCon diode C * * * * * * * * * * Short circuit withstand time - 10s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop(R) 2nd generation for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior Easy paralleling capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 1200V IC 15A VCE(sat),Tj=25C 1.75V Tj,max 175C Marking Code K15T1202 Package PG-TO-247-3 G E PG-TO-247-3 Type IKW15N120T2 Maximum Ratings Parameter Collector-emitter voltage DC collector current (Tj = 150C) TC = 25C TC = 110C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 175C Diode forward current (Tj = 150C) TC = 25C TC = 110C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Wavesoldering only, temperature on leads only 1 Symbol VCE IC Value 1200 30 15 Unit V A ICpuls IF 60 60 25 15 IFpuls VGE 2) 60 20 10 235 -40...+175 -55...+150 260 V s W C tSC Ptot Tj Tstg - VGE = 15V, VCC 600V, Tj, start 175C 2) J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.1 Sep 08 Power Semiconductors TrenchStop 2 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient RthJA RthJCD RthJC Symbol (R) nd IKW15N120T2 generation Series Conditions Max. Value 0.63 1.12 40 Unit K/W Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V(BR)CES VGE=0V, IC=500A VCE(sat) V G E = 15 V, I C =15A T j = 25C T j = 150 C T j = 175 C Diode forward voltage VF VGE=0V, IF=15A T j = 25C T j = 150 C T j = 175 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C =0.6mA,V C E =V G E V C E = 12 00 V, VGE=0V T j = 25C T j = 150 C T j = 175 C Gate-emitter leakage current Transconductance IGES gfs V C E = 0 V , V G E =20V V C E =20V, I C =15A 8 0.4 4.0 20 600 nA S 5.2 1.75 1.8 1.75 5.8 2.2 6.4 mA 1.7 2.1 2.2 2.2 1200 V Symbol Conditions Value min. typ. max. Unit Power Semiconductors 2 Rev. 2.1 Sep 08 TrenchStop 2 Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current1) IC(SC) Ciss Coss Crss QGate LE V C E =25V, VGE=0V, f=1MHz (R) nd IKW15N120T2 generation Series - 1000 100 56 93 13 - pF V C C = 96 0 V, I C =40A V G E =15V nC nH A V G E =15V,t S C 1 0 s V C C = 600 V, T j , s t a r t = 2 5C T j , s t a r t = 1 75 C 82 60 Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm dirr/dt T j = 25C , V R = 60 0 V , I F =15A, d i F /d t= 450A/s 300 1.3 10 215 ns C A A/s td(on) tr td(off) tf Eon Eoff Ets T j = 25C , V C C = 60 0 V, I C =15A, V G E = 0 /1 5 V, R G = 4 1 .8 , L 2 ) =1 26nH, C 2 ) =34pF Energy losses include "tail" and diode reverse recovery. 32 25 362 95 1.25 0.8 2.05 mJ ns Symbol Conditions Value min. typ. max. Unit 1) 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2.1 Sep 08 Power Semiconductors TrenchStop 2 Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm dirr/dt T j = 175 C td(on) tr td(off) tf Eon Eoff Ets Symbol (R) nd IKW15N120T2 generation Series Conditions Value min. typ. 31 30 450 176 1.5 1.3 2.8 460 2.65 13 123 max. - Unit T j = 175 C V C C = 60 0 V, I C =15A, V G E = 0 /1 5 V, R G = 4 1 .8 , L 1 ) =3 15nH, C 1 ) =34pF Energy losses include "tail" and diode reverse recovery. ns mJ ns C A A/s V R = 60 0 V , I F =15A, d i F /d t= 460A/s 1) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. 4 Rev. 2.1 Sep 08 Power Semiconductors TrenchStop 2 (R) nd IKW15N120T2 generation Series tp=3s 60A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 10A 10s 50s 40A TC=80C TC=110C 150s 1A 500s 20ms DC 0.1A 1V 20A Ic Ic 0A 10Hz 100Hz 1kHz 10kHz 100kHz 10V 100V 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 41.8) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C;VGE=15V) 200W 150W IC, COLLECTOR CURRENT POWER DISSIPATION 30A 20A 100W Ptot, 10A 50W 0W 25C 50C 75C 100C 125C 150C 0A 25C 75C 125C TC, CASE TEMPERATURE Figure 3. Maximum power dissipation as a function of case temperature (Tj 175C) TC, CASE TEMPERATURE Figure 4. Maximum DC Collector current as a function of case temperature (VGE 15V, Tj 175C) Power Semiconductors 5 Rev. 2.1 Sep 08 TrenchStop 2 (R) nd IKW15N120T2 generation Series 60A 60A 50A 20V 50A 20V VGE=17V IC, COLLECTOR CURRENT 40A 15V 13V IC, COLLECTOR CURRENT VGE=17V 40A 15V 13V 30A 11V 9V 30A 11V 9V 20A 7V 20A 7V 10A 10A 0A 0V 1V 2V 3V 4V 0A 0V 1V 2V 3V 4V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C) VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE 60A 50A 3.0V 2.5V 2.0V 1.5V IC=30A IC, COLLECTOR CURRENT 40A 30A IC=15A 20A IC=7.5A 1.0V 0.5V 0.0V 0C 50C 100C 150C IC=2A 10A TJ=175C 25C 0V 2V 4V 6V 8V 10V 12V 0A VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) Power Semiconductors 6 Rev. 2.1 Sep 08 TrenchStop 2 (R) nd IKW15N120T2 generation Series td(off) 1000 ns td(off) t, SWITCHING TIMES 100ns t, SWITCHING TIMES tf 100 ns tf td(on) td(on) tr 10ns tr 7.5A 15.0A 22.5A 10 ns 10 30 50 70 90 110 IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE=600V, VGE=0/15V, RG=41.8, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175C, VCE=600V, VGE=0/15V, IC=15A, Dynamic test circuit in Figure E) td(off) VGE(th), GATE-EMITT TRSHOLD VOLTAGE 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V min. typ. max. t, SWITCHING TIMES 100ns tf td(on) tr 10ns 0C 50C 100C 150C 0C 50C 100C 150C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=15A, RG=41.8, Dynamic test circuit in Figure E) TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 600A) Power Semiconductors 7 Rev. 2.1 Sep 08 TrenchStop 2 (R) nd IKW15N120T2 generation Series 7.5mJ E, SWITCHING ENERGY LOSSES Ets* 5.0mJ E, SWITCHING ENERGY LOSSES *) Eon and Etsinclude losses due to diode recovery *) Eon and Ets include losses due to diode recovery 5.00 mJ Ets* 3.75 mJ Eon* 2.5mJ Eoff 2.50 mJ Eon* 1.25 mJ Eoff 0.0mJ 7.5A 15.0A 22.5A 0.00 mJ 10 30 50 70 90 110 IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=175C, VCE=600V, VGE=0/15V, RG=41.8, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=175C, VCE=600V, VGE=0/15V, IC=15A, Dynamic test circuit in Figure E) *) E on and E ts include losses due to diode recovery *) Eon and Ets include losses due to diode recovery E, SWITCHING ENERGY LOSSES E ts * 2.4mJ E, SWITCHING ENERGY LOSSES 5.00mJ Ets* 3.75mJ Eon* E on* 2.50mJ Eoff 1.2mJ E off 1.25mJ 0.0mJ 0C 50C 100C 150C 0.00mJ 400V 500V 600V 700V TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=15A, RG=41.8, Dynamic test circuit in Figure E) VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=175C, VGE=0/15V, IC=15A, RG=41.8, Dynamic test circuit in Figure E) Power Semiconductors 8 Rev. 2.1 Sep 08 TrenchStop 2 (R) nd IKW15N120T2 generation Series 15V VGE, GATE-EMITTER VOLTAGE 1nF 240V Ciss 10V 960V c, CAPACITANCE 100pF Coss 5V Crss 0V 0nC 25nC 50nC 75nC 10pF 0V 10V 20V QGE, GATE CHARGE Figure 17. Typical gate charge (IC=15 A) VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) SHORT CIRCUIT WITHSTAND TIME 15s IC(sc), short circuit COLLECTOR CURRENT 100A 10s 75A 50A 5s tSC, 25A 0s 12V 14V 16V 18V 0A 12V 14V 16V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ175C) VGE, GATE-EMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE 600V, Tj,start =175C) Power Semiconductors 9 Rev. 2.1 Sep 08 TrenchStop 2 (R) nd IKW15N120T2 generation Series VCE, COLLECTOR-EMITTER VOLTAGE 25A 20A IC, COLLECTOR CURRENT VCE 600V 15A 600V 15A 400V 10A IC 400V 10A 200V 5A 5A 200V 0A 0us IC 0.4us 0.8us 1.2us VCE 0V 0A 0us 0V 0.4us 0.8us 1.2us t, TIME Figure 21. Typical turn on behavior (VGE=0/15V, RG=41.8, Tj = 175C, Dynamic test circuit in Figure E) t, TIME Figure 22. Typical turn off behavior (VGE=15/0V, RG=41.8, Tj = 175C, Dynamic test circuit in Figure E) ZthJC, TRANSIENT THERMAL RESISTANCE ZthJC, TRANSIENT THERMAL RESISTANCE 10 K/W D=0.5 0.2 10 K/W -1 0 10 K/W D=0.5 R,(K/W) 0.291 0.434 0.363 0.028 R1 0 0.1 0.05 0.02 0.01 R,(K/W) 0.143 0.217 0.258 0.017 R1 , (s) 0.2 0.1 10 K/W -1 3.06*10 -3 3.47*10 -2 1.71*10 -1 2.63*10 R2 -4 , (s) -4 2.75*10 -3 2.60*10 -2 1.48*10 -1 1.78*10 R2 0.05 0.02 0.01 10 K/W -2 single pulse C1=1/R1 C2=2/R2 C 1= 1/R 1 C 2= 2/R 2 single pulse 10 K/W 10s -2 10s 100s 1ms 10ms 100ms 100s 1ms 10ms 100ms tP, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = tp / T) tP, PULSE WIDTH Figure 24. Diode transient thermal impedance as a function of pulse width (D=tP/T) Power Semiconductors 10 Rev. 2.1 Sep 08 TrenchStop 2 (R) nd IKW15N120T2 generation Series 600ns Qrr, REVERSE RECOVERY CHARGE trr, REVERSE RECOVERY TIME 500ns 400ns 300ns 200ns 100ns 0ns 400A/s 800A/s 1200A/s 3C TJ=175C 2C TJ=175C TJ=25C 1C TJ=25C 0C 400A/s 800A/s 1200A/s diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=600V, IF=15A, Dynamic test circuit in Figure E) diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=600V, IF=15A, Dynamic test circuit in Figure E) TJ=175C 20A -600A/s TJ=25C dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT REVERSE RECOVERY CURRENT -500A/s 15A -400A/s TJ=25C 10A TJ=175C -300A/s -200A/s Irr, 5A -100A/s 0A 400A/s 800A/s 1200A/s -0A/s 400A/s 800A/s 1200A/s diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR=600V, IF=15A, Dynamic test circuit in Figure E) diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=600V, IF=15A, Dynamic test circuit in Figure E) Power Semiconductors 11 Rev. 2.1 Sep 08 TrenchStop 2 (R) nd IKW15N120T2 generation Series 60A TJ=25C 50A 175C 2.0V IF=30A VF, FORWARD VOLTAGE IF, FORWARD CURRENT 15A 1.5V 7.5A 2A 1.0V 40A 30A 20A 10A 0.5V 0A 0V 1V 2V 0.0V 0C 50C 100C 150C VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature Power Semiconductors 12 Rev. 2.1 Sep 08 TrenchStop 2 (R) nd IKW15N120T2 generation Series PG-TO247-3 M M MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 5.44 3 19.80 4.17 3.50 5.49 6.04 MAX 5.16 2.53 2.11 1.33 2.41 2.16 3.38 3.13 0.68 21.10 17.65 1.35 16.03 14.15 5.10 2.60 MIN 0.193 0.089 0.073 0.042 0.075 0.075 0.113 0.113 0.022 0.820 0.640 0.041 0.618 0.516 0.145 0.066 0.214 3 MAX 0.203 0.099 0.083 0.052 0.095 0.085 0.133 0.123 0.027 0.831 0.695 0.053 0.631 0.557 0.201 0.102 Z8B00003327 0 0 55 7.5mm 20.31 4.47 3.70 6.00 6.30 0.780 0.164 0.138 0.216 0.238 0.799 0.176 0.146 0.236 0.248 17-12-2007 03 Power Semiconductors 13 Rev. 2.1 Sep 08 TrenchStop 2 (R) nd IKW15N120T2 generation Series i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR Ir r m QF dir r /dt 90% Ir r m Figure C. Definition of diodes switching characteristics 1 Tj (t) p(t) r1 r2 2 n rn r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Power Semiconductors 14 Rev. 2.1 Sep 08 TrenchStop 2 (R) nd IKW15N120T2 generation Series Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 15 Rev. 2.1 Sep 08 |
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